JPS5864697A - 半導体メモリセル - Google Patents

半導体メモリセル

Info

Publication number
JPS5864697A
JPS5864697A JP56164022A JP16402281A JPS5864697A JP S5864697 A JPS5864697 A JP S5864697A JP 56164022 A JP56164022 A JP 56164022A JP 16402281 A JP16402281 A JP 16402281A JP S5864697 A JPS5864697 A JP S5864697A
Authority
JP
Japan
Prior art keywords
electrode
current
channel
type
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56164022A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0158594B2 (en]
Inventor
Kazuo Terada
寺田　和夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56164022A priority Critical patent/JPS5864697A/ja
Publication of JPS5864697A publication Critical patent/JPS5864697A/ja
Publication of JPH0158594B2 publication Critical patent/JPH0158594B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP56164022A 1981-10-14 1981-10-14 半導体メモリセル Granted JPS5864697A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56164022A JPS5864697A (ja) 1981-10-14 1981-10-14 半導体メモリセル

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56164022A JPS5864697A (ja) 1981-10-14 1981-10-14 半導体メモリセル

Publications (2)

Publication Number Publication Date
JPS5864697A true JPS5864697A (ja) 1983-04-18
JPH0158594B2 JPH0158594B2 (en]) 1989-12-12

Family

ID=15785296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56164022A Granted JPS5864697A (ja) 1981-10-14 1981-10-14 半導体メモリセル

Country Status (1)

Country Link
JP (1) JPS5864697A (en])

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6057963A (ja) * 1983-09-09 1985-04-03 Toshiba Corp 半導体記憶装置
JPS60177494A (ja) * 1984-02-22 1985-09-11 Nec Corp 半導体メモリセルの駆動方法
US5016217A (en) * 1988-05-17 1991-05-14 Ict International Cmos Technology, Inc. Logic cell array using CMOS EPROM cells having reduced chip surface area
US5216632A (en) * 1990-12-21 1993-06-01 Messerschmitt-Bolkow-Blohm Gmbh Memory arrangement with a read-out circuit for a static memory cell

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6057963A (ja) * 1983-09-09 1985-04-03 Toshiba Corp 半導体記憶装置
JPS60177494A (ja) * 1984-02-22 1985-09-11 Nec Corp 半導体メモリセルの駆動方法
US5016217A (en) * 1988-05-17 1991-05-14 Ict International Cmos Technology, Inc. Logic cell array using CMOS EPROM cells having reduced chip surface area
US5216632A (en) * 1990-12-21 1993-06-01 Messerschmitt-Bolkow-Blohm Gmbh Memory arrangement with a read-out circuit for a static memory cell

Also Published As

Publication number Publication date
JPH0158594B2 (en]) 1989-12-12

Similar Documents

Publication Publication Date Title
US5361224A (en) Nonvolatile memory device having ferroelectric film
KR20010075543A (ko) 반도체 장치
JPH05508054A (ja) 自己増幅ダイナミックｍｏｓトランジスタメモリセルを有するデバイス
US4545035A (en) Dynamic RAM with nonvolatile shadow memory
KR100668347B1 (ko) 금속-절연체 천이막 저항체를 포함하는 반도체 메모리 소자
JPH0581069B2 (en])
US6842363B2 (en) Magnetoresistive memory and method for reading a magnetoresistive memory
JPS5864697A (ja) 半導体メモリセル
US5267192A (en) Semiconductor memory device
KR100432442B1 (ko) 자기 증폭 다이내믹 메모리 셀을 갖춘 메모리 셀 어레이를동작시키기 위한 방법
JPS6260191A (ja) 半導体メモリセル
JPH09213812A (ja) Ｄｒａｍセル及びｄｒａｍ
JPH06326272A (ja) 半導体記憶装置
JPS60192358A (ja) 半導体メモリセル
JPS5864696A (ja) 半導体メモリセル
JPS601695A (ja) 半導体メモリセル
US6667912B1 (en) Timing scheme for semiconductor memory devices
JPH1092954A (ja) 半導体記憶装置
JPS59149048A (ja) 半導体メモリセル
JPS59149049A (ja) 半導体メモリセル
EP0257912A2 (en) Static semiconductor memory device
JPS61134059A (ja) 半導体記憶装置
JPS5864693A (ja) 半導体メモリセル
JPH04111298A (ja) メモリ回路
JPS6260192A (ja) 半導体メモリセルの駆動方法